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| NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Vorlaufige Daten / Preliminary Data 0.5x45 Emitter/ Cathode SFH 3100 F R 0.9 R 0.7 16.5 16.0 2.2 2.0 2.54 1.42 1.22 0.6 0.4 3.1 2.9 1.04 17.77 0.84 17.27 4.1 3.9 3.0 2.8 0.5 0.3 0.9 0.7 GEO06976 geo06976 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 840 nm bis 1080 nm q Enge Empfangscharakteristik q Geringe Auenabmessungen q Gleiche Bauform wie IRED SFH 4110 q Hoher Koppelfaktor in Lichtschranken mit SFH 4110 q IR-Filter q Leichte Unterscheidbarkeit zwischen SFH 3100 F (schwarzes Gehause) und SFH 4110 (klares Gehause) Anwendungen q Empfanger in Lichtschranken q Bandende-Erkennung (z.B. Videorecorder) q Datenubertragung q Positionsuberwachung q Barcode-Leser q Messen/Steuern/Regeln" q Munzzahler Semiconductor Group 1 Features q Especially suitable for applications from q q q q q q 840 nm to 1080 nm Narrow half angle Small outline dimensions Same package as IRED SFH 4110 High coupling factor in light barriers with SFH 4110 IR filter Easy identification of SFH 3100 F (black package) and SFH 4110 (clear package) Applications q Detector in photointerrupters q Tape end detection q Data transmission q Position sensing q Barcode reader q For control and drive circuits q Coin counters 1998-05-14 feo06976 1.3 1.1 1.6 1.4 1.04 0.84 0.84 0.64 60 SFH 3100 F Typ Type SFH 3100 F Bestellnummer Ordering Code Q62702-P5073 Gehause Package Schwarz eingefarbtes Miniatur-Kunststoffgehause, Anschlusse im 2,54-mm Raster, Emitter-Kennzeichnung: kurzer Anschlu Black-colored miniature plastic package, solder tabs 2.54-mm (1/10"), emitter marking: short lead Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektor-Emitterspannung, t < 2 min Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, tp < 10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient Symbol Symbol Top; Tstg VCE VCE IC ICS VEC Ptot RthJA Wert Value - 40 ... + 85 30 70 50 100 7 150 280 Einheit Unit C V V mA mA V mW K/W Semiconductor Group 2 1998-05-14 SFH 3100 F Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Abmessung der Chipflache Dimensions of chip area Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Dunkelstrom, VCE = 20 V Dark current Symbol Symbol S max Wert Value 920 Einheit Unit nm 840 ... 1080 nm LxB LxW CCE 1x1 14 mm x mm Grad deg. pF 6.5 3.0 ICEO 2 ( 50) nA Semiconductor Group 3 1998-05-14 SFH 3100 F Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V *) Anstiegs-/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2, = 950 nm 1) 1) Symbol Symbol IPCE Wert Value > 0.25 Einheit Unit mA tr tf 7 9 s VCEsat 110 ( 400) mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group *) Sonderselektion auf Anfrage *) Special bin selection on request Semiconductor Group 4 1998-05-14 SFH 3100 F Rel. spectral sensitivity Srel = f () 100 % 90 80 70 60 50 40 30 20 OHF00377 Photocurrent IPCE = f (Ee), VCE = 5 V 10 1 mA OHF00378 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 7 OHF00379 S rel PCE C CE pF 6 5 4 10 0 10 -1 3 2 1 10 -2 10 0 700 800 900 1000 nm 1100 10 -3 -3 10 10 -2 10 -1 mW/cm 10 0 Ee 2 0 -2 10 10 -1 10 0 10 1 V 10 2 V CE Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 C PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Dark current ICEO = f (TA), VCE = 20 V, E = 0 OHF01524 Total power dissipation Ptot = f (TA) OHF00380 PCE 1.6 CEO 10 3 nA 160 mW Ptot 140 120 100 OHF00381 10 2 10 1 80 60 10 0 40 20 0 25 50 75 C 100 TA 10 -1 0 20 40 60 80 C 100 TA 0 0 20 40 60 80 C 100 TA Photocurrent SFH 3100F IPCE = f (VCE) 2.0 mA PCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 V 40 OHF00386 Dark current ICEO = f (VCE), E = 0 CEO 1.0 mW/cm 2 0.5 mW/cm 2 0.25 mW/cm 2 0.1 mW/cm 2 10 0 10 1 nA OHF00383 10 -1 10 -2 0 10 20 V CE V 30 V CE Semiconductor Group 5 1998-05-14 |
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